Method and system for forming dual gate structures in a...

Details Method and system for forming dual gate structures in a... Method and system for forming dual gate structures in a...

2005-12-13

2005-12-13

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S384000, C257S437000

Reexamination Certificate

active

06974995

ABSTRACT:
A method and system for providing a semiconductor device is described. The semiconductor includes a core and a periphery. The method and system include providing a plurality of core gate stacks in the core, a plurality of sources in the core and a plurality of periphery gate stacks in the periphery. Each of the plurality of core gate stacks includes a first polysilicon gate and a WSi layer above the first polysilicon gate. The plurality of sources resides between a portion of the plurality of core gate stacks. Each of the plurality of periphery gate stacks includes a second polysilicon gate and a CoSi layer on the second polysilicon gate.

REFERENCES:
patent: 5933730 (1999-08-01), Sun et al.
patent: 5977601 (1999-11-01), Yang et al.
patent: 5981339 (1999-11-01), Chang et al.
patent: 6338993 (2002-01-01), Lien

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