Optics: measuring and testing – With plural diverse test or art
Reexamination Certificate
2006-02-28
2006-02-28
Toatley, Jr., Gregory J. (Department: 2877)
Optics: measuring and testing
With plural diverse test or art
C356S326000
Reexamination Certificate
active
07006205
ABSTRACT:
Plasma events are detected by analyzing the spectral emissions of a plasma process of a substrate. A plasma is monitored by a spectrometer which produces plasma emission data which includes an intensity value for each individual wavelength which is a large quantity of information. The plasma emission data is processed with an algorithm or combination of algorithms to reduce the quantity of the plasma emission data. A peak finding algorithm which identifies the wavelengths of light which are associated with a plasma process allowing the other wavelengths to be ignored. A data reduction algorithm provides a single value representative of the intensity of the emitted light from each peak. A noise reduction algorithm removes noise from the spectral signal by eliminating signals at wavelengths which do not exceed a threshold intensity and do not exceed a threshold wavelength span. The data may also be processed with principal component analysis to further reduce the optical emission data. By reducing the optical emission data, the neural network can provide faster data analysis. The neural network of the inventive system identifies the plasma event after being trained and can control the processing equipment when plasma events are detected.
REFERENCES:
patent: 5347460 (1994-09-01), Gifford et al.
patent: 5711843 (1998-01-01), Jahns
patent: 5841651 (1998-11-01), Fu
patent: 6101971 (2000-08-01), Denholm et al.
Ronald L. Allen, Randy Moor, and Mike Whelan, “Application of neural networks to plasma etch end point detection”,J Vac. Sci Technol,B 14(1), Jan./Feb. 1996.
Michael D. Baker, Christopher D. Himmel, and Gary S. May, “In-Situ Prediction of Reactive Ion Etch Endpoint Using Neural Networks”,IEEE Transactions on Compoents, Packaging, and Manufacturing Technology—Part A, vol. 18, No. 3, Sep. 1995.
Agarwal Ashish
Lymberopoulos Dimitris
Applied Materials Inc.
Dergosits & Noah
Punnoose Roy M.
Toatley , Jr. Gregory J.
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