Method and system for etching a film stack

Details Method and system for etching a film stack Method and system for etching a film stack

2007-02-06

2007-02-06

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

C438S023000, C438S197000, C438S283000, C438S618000, C438S706000, C438S736000, C427S573000, C430S270100, C430S313000

Reexamination Certificate

active

10926403

ABSTRACT:
A method and system is described for preparing a film stack, and forming a feature in the film stack using a plurality of dry etching processes. The feature formed in the film stack can include a gate structure having a critical dimension of approximately 25 nm or less. This critical dimension can be formed in the polysilicon layer using four mask layers.

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