Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-24
2007-07-24
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S691000, C257SE21230
Reexamination Certificate
active
11088324
ABSTRACT:
The invention provides a process for forming a planar copper structure on a wafer surface in a first module and a second module of a system. During the process, a copper layer is formed on the wafer surface by utilizing an electrochemical deposition process in the first module. After the deposition, the wafer is moved to the second module of the system and an electrochemical mechanical polishing process is applied to planarize the copper layer to a predetermined thickness. The first and second modules can be positioned in a cluster tool. The wafer is subsequently processed by selective copper CMP and selective barrier layer CMP, which are conducted in another cluster tool.
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Basol Bulent M
Talieh Homayoun
Brewster William M.
Knobbe Martens Olson & Bear LLP
Novellus Systems Inc.
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