Method and system for dopant containment

Details Method and system for dopant containment Method and system for dopant containment

2006-10-17

2006-10-17

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S479000, C257SE21563

Reexamination Certificate

active

07122442

ABSTRACT:
According to one embodiment, a semiconductor device is provided. The semiconductor device includes an oxide layer. The semiconductor device also includes a silicon layer disposed outwardly from the oxide layer and having at least one region comprising a dopant. The semiconductor device also includes a dielectric layer disposed outwardly from the silicon layer. The semiconductor device also includes a gate disposed outwardly from the dielectric layer. The semiconductor device also includes a blocking layer disposed between the oxide layer and the silicon layer. The blocking layer is operable to at least partially block a transfer of the dopant from the at least one region of the silicon layer to the oxide layer.

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