Method and system for deposition tuning in an epitaxial film...

Details Method and system for deposition tuning in an epitaxial film... Method and system for deposition tuning in an epitaxial film...

2007-03-27

2007-03-27

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

C438S481000, C438S752000, C438S753000, C324S500000

Reexamination Certificate

active

11178973

ABSTRACT:
A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.

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