Method and system for controlling the uniformity of a...

Details Method and system for controlling the uniformity of a... Method and system for controlling the uniformity of a...

2006-07-31

2011-12-27

Ahmed, Shamim (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S058000, C216S059000, C216S067000, C438S706000, C438S710000, C156S345240, C156S345470

Reexamination Certificate

active

08083961

ABSTRACT:
A method and system for treating a substrate using a ballistic electron beam is described, whereby the radial uniformity of the electron beam flux is adjusted by modulating the source radio frequency (RF) power. For example, a plasma processing system is described having a first RF power coupled to a lower electrode, which may support the substrate, a second RF power coupled to an upper electrode that opposes the lower electrode, and a negative high voltage direct current (DC) power coupled to the upper electrode to form the ballistic electron beam. The amplitude of the second RF power is modulated to affect changes in the uniformity of the ballistic electron beam flux.

REFERENCES:
patent: 6030667 (2000-02-01), Nakagawa et al.
patent: 2002/0041160 (2002-04-01), Barnes et al.
patent: 2003/0207583 (2003-11-01), Kuthi et al.
patent: 2005/0241762 (2005-11-01), Paterson et al.
patent: 2006/0037701 (2006-02-01), Koshiishi et al.

Affiliated with

Also associated with

Rating

Method and system for controlling the uniformity of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for controlling the uniformity of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for controlling the uniformity of a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4267313