Method and system for controlling MRAM write current to...

Details Method and system for controlling MRAM write current to... Method and system for controlling MRAM write current to...

2006-09-19

2006-09-19

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S171000, C365S189011, C365S189040

Reexamination Certificate

active

07110289

ABSTRACT:
In a method and system for reducing power consumed by a magnetic memory, magnetic memory cells are coupled to a bit line and are associated with a plurality of digit lines. A bit line current is provided in the bit line. Digit currents are provided in parallel in the digit lines at substantially the same time as the bit line current. The digit and bit line currents allow the magnetic memory cells to be written to a plurality of states in parallel.

REFERENCES:
patent: 5640343 (1997-06-01), Gallagher et al.
patent: 6272040 (2001-08-01), Salter et al.
patent: 6418046 (2002-07-01), Naji
patent: 6552928 (2003-04-01), Qi et al.
patent: 6687178 (2004-02-01), Qi et al.
patent: 2004/0109348 (2004-06-01), Ooishi

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