Method and system for controlling beam scanning in an ion...

Details Method and system for controlling beam scanning in an ion... Method and system for controlling beam scanning in an ion...

2008-01-29

2008-01-29

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S3960ML, C250S398000

Reexamination Certificate

active

07323700

ABSTRACT:
A method and apparatus for controlling ion beam scanning in an ion implanter is disclosed. Before an implant process is commenced, a scan waveform to create a uniform distribution along a magnetic scan axis is determined, using a travelling Faraday detector (24). Charge data from the travelling Faraday (24) is collected into a small, finite number of channels and this is used to create a histogram of collected charge vs. beam crossing time. This is in turn used to correct a target scan velocity to compensate for any dose non-uniformity. The target scan velocity is used as a first input to a fast feedback loop. A second input is obtained by digitizing the output of an inductive pickup in the magnet of the magnetic scanner in the ion implanter. Each input is separately integrated and Fast Fourier Transformed Error coefficients Ferrorare obtained by dividing. Fourier coefficients from the target scan velocity by Fourier coefficients from the inductive pickup signal. These error coefficients are used to control the command waveform to the magnetic scanner in the ion implanter.

REFERENCES:
patent: 4494005 (1985-01-01), Shibata et al.
patent: 4733091 (1988-03-01), Robinson et al.
patent: 4922106 (1990-05-01), Berrian et al.
patent: 5229615 (1993-07-01), Brune et al.
patent: 5483077 (1996-01-01), Glavish
patent: 5672879 (1997-09-01), Glavish
patent: 6037583 (2000-03-01), Moehler et al.
patent: 6525327 (2003-02-01), Mitchell et al.
patent: 0 457 321 (1991-11-01), None
patent: 0 975 004 (2000-01-01), None
patent: 99/13488 (1999-03-01), None

Affiliated with

Also associated with

Rating

Method and system for controlling beam scanning in an ion... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and system for controlling beam scanning in an ion..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and system for controlling beam scanning in an ion... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2762452