Method and structures for measuring gate tunneling leakage...

Details Method and structures for measuring gate tunneling leakage... Method and structures for measuring gate tunneling leakage...

2006-03-14

2006-03-14

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C257S048000

Reexamination Certificate

active

07011980

ABSTRACT:
A structure and method for measuring leakage current. The structure includes: a body formed in a semiconductor substrate; a dielectric layer on a top surface of the silicon body; and a conductive layer on a top surface of the dielectric layer, a first region of the dielectric layer having a first thickness and a second region of the dielectric layer between the conductive layer and the top surface of the body having a second thickness, the second thickness different from the first thickness. The method includes, providing two of the above structures having different areas of first and the same area of second or having different areas of second and the same area of first dielectric regions, measuring a current between the conductive layer and the body for each structure and calculating a gate tunneling leakage current based on the current measurements and dielectric layer areas of the two devices.

REFERENCES:
patent: 5930620 (1999-07-01), Wristers et al.
patent: 6074886 (2000-06-01), Henaux
patent: 6281593 (2001-08-01), Brown et al.
patent: 6300206 (2001-10-01), Fukada et al.
patent: 6358819 (2002-03-01), Shelton et al.
patent: 6500715 (2002-12-01), Matsuzaki et al.
patent: 6528387 (2003-03-01), Moriyasu et al.
patent: 6664589 (2003-12-01), Forbes et al.
patent: 6677645 (2004-01-01), Bryant et al.
patent: 6713353 (2004-03-01), Kanda et al.
patent: 6756635 (2004-06-01), Yasuda et al.
patent: 6808972 (2004-10-01), Sirringhaus et al.
patent: 0831524 (1998-03-01), None
patent: 6021369 (1994-01-01), None

Affiliated with

Also associated with

Rating

Method and structures for measuring gate tunneling leakage... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and structures for measuring gate tunneling leakage..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structures for measuring gate tunneling leakage... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3535573