Method and structure to reduce dark current in image sensors

Details Method and structure to reduce dark current in image sensors Method and structure to reduce dark current in image sensors

2007-04-10

2011-10-04

Wilson, Allan R (Department: 2815)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE21040

Reexamination Certificate

active

08030114

ABSTRACT:
A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel region and a periphery region, forming a light sensing element on the pixel region, and forming at least one transistor in the pixel region and at least one transistor in the periphery region. The step of forming the at least one transistor in the pixel region and periphery region includes forming a gate electrode in the pixel region and periphery region, depositing a dielectric layer over the pixel region and periphery region, partially etching the dielectric layer to form sidewall spacers on the gate electrode and leaving a portion of the dielectric layer overlying the pixel region, and forming source/drain (S/D) regions by ion implantation.

REFERENCES:
patent: 6894268 (2005-05-01), Ohkawa
patent: 6908839 (2005-06-01), Rhodes
patent: 7345308 (2008-03-01), Sakano et al.
patent: 7345330 (2008-03-01), Rhodes
patent: 7402451 (2008-07-01), Rhodes
patent: 2005/0001277 (2005-01-01), Rhodes
patent: 2008/0083938 (2008-04-01), Liang et al.
patent: 2008/0105944 (2008-05-01), Chang et al.
patent: 2008/0188029 (2008-08-01), Rhodes

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