Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1994-08-03
1996-07-23
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
Bad bit
371 102, 36523001, 36523006, 395412, 395410, G11C 2900, G06F 1200
Patent
active
055396976
ABSTRACT:
An apparatus utilizing a semiconductor memory includes a semiconductor memory with one or more permanent unrepairable defects. The use of defective semiconductor memory that was previously discarded significantly reduces the memory cost of the apparatus. A memory mapping circuit is used to convert an address for a defective memory location within the defective semiconductor memory to an address for a working memory location. The memory mapping circuit is transparent to the apparatus and the defective memory functions as an undefective memory. Consequently, an apparatus using the memory mapping circuit and the defective memory performs as apparatus with a memory that has no unrepairable defects.
REFERENCES:
patent: 5239656 (1993-08-01), Kawano
patent: 5253350 (1993-10-01), Foster et al.
patent: 5359570 (1994-10-01), Hsu et al.
"Improved RAS by Segmenting Memory Using a SRAM and Reserved Area Defective Memory Relocation," IBM TDB, vol. 30, No. 12, May 1988 pp. 204-208.
Kim Hak J.
Kim Timothy
Bi-Search Corporation
Gunnison Forrest E.
Nguyen Viet Q.
Tae I1 Media Co., Ltd.
LandOfFree
Method and structure for using defective unrepairable semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and structure for using defective unrepairable semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for using defective unrepairable semiconduc will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-718970