Method and structure for ultra narrow crack stop for...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S638000, C257SE21581, C257SE23170

Reexamination Certificate

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07544602

ABSTRACT:
An integrated circuit design and a method of fabrication and, more particularly, a semiconductor structure having an ultra narrow crack stop for use in multilevel level devices and a method of making the same. The structure includes a first dielectric layer having a first connection connecting to an underlying interconnect and a second dielectric layer having a second connection connecting to the first connection. A stop gap structure extends through the first dielectric layer and the second dielectric layer, and has a width of about less than 1 um.

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