Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-29
2009-06-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C257SE21581, C257SE23170
Reexamination Certificate
active
07544602
ABSTRACT:
An integrated circuit design and a method of fabrication and, more particularly, a semiconductor structure having an ultra narrow crack stop for use in multilevel level devices and a method of making the same. The structure includes a first dielectric layer having a first connection connecting to an underlying interconnect and a second dielectric layer having a second connection connecting to the first connection. A stop gap structure extends through the first dielectric layer and the second dielectric layer, and has a width of about less than 1 um.
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Clevenger Lawrence A.
Colburn Matthew E.
Landers William F.
Li Wai-Kin
Fourson George
Greenblum & Bernstein P.L.C.
International Business Machines - Corporation
Yaghmour Rosa S.
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