Method and structure for the adhesion between dielectric layers

Details Method and structure for the adhesion between dielectric layers Method and structure for the adhesion between dielectric layers

2006-03-07

2006-03-07

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000, C438S790000

Reexamination Certificate

active

07008882

ABSTRACT:
A method for forming an adhesion between dielectric layers, it includes forming a first dielectric layer and forming a second dielectric layer having a first portion and a second portion. The first portion is on the first dielectric layer and the second portion is on the first portion. The first portion and second portion are formed by an in-situ method. The first portion has at least one of the following a dielectric constant, hardness or SiCH3/SiO area ratio, which is higher than the second portion. A structure of enhanced-inter-adhesion dielectric layers includes a first dielectric layer and a second dielectric layer having a first portion on the first dielectric layer, and a second portion on the first portion. Herein, the first portion has a dielectric constant around 2.8 to 3.5 higher than second portion.

REFERENCES:
patent: 6251770 (2001-06-01), Uglow et al.
patent: 6362091 (2002-03-01), Andideh et al.
patent: 6663973 (2003-12-01), Lee et al.
patent: 6740539 (2004-05-01), Conti et al.
patent: 6812043 (2004-11-01), Bao et al.

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