Method and structure for self-aligned device contacts

Details Method and structure for self-aligned device contacts Method and structure for self-aligned device contacts

2011-01-25

2011-01-25

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S640000, C438S675000, C257SE21577

Reexamination Certificate

active

07875550

ABSTRACT:
Disclosed are embodiments of a semiconductor structure with a partially selfaligned contact in lower portion of the contact is enlarged to reduce resistance without impacting device yield. Additionally, the structure optionally incorporates a thick middle-of-the-line (MOL) nitride stress film to enhance carrier mobility. Embodiments of the method of forming the structure comprise forming a sacrificial section in the intended location of the contact. This section is patterned so that it is self-aligned to the gate electrodes and only occupies space that is intended for the future contact. Dielectric layer(s) (e.g., an optional stress layer followed by an interlayer dielectric) may be deposited once the sacrificial section is in place. Conventional contact lithography is used to etch a contact hole through the dielectric layer(s) to the sacrificial section. The sacrificial section is then selectively removed to form a cavity and the contact is formed in the cavity and contact hole.

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Costrini et al., U.S. Appl. No. 12/194,563, Office Action Communication, Jan. 6, 2010, 7 pages.

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