Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-01-18
2011-01-18
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S427000, C438S297000, C438S404000
Reexamination Certificate
active
07871895
ABSTRACT:
A method of forming shallow trench isolation (STI) regions for semiconductor devices, the method including defining STI trench openings within a semiconductor substrate; filling the STI trench openings with an initial trench fill material; defining a pattern of nano-scale openings over the substrate, at locations corresponding to the STI trench openings; transferring the pattern of nano-scale openings into the trench fill material so as to define a plurality of vertically oriented nano-scale openings in the trench fill material; and plugging upper portions of the nano-scale openings with additional trench fill material, thereby defining porous STI regions in the substrate.
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Divakaruni Ramachandra
Li Wai-Kin
Yang Haining S.
Cantor & Colburn LLP
International Business Machines - Corporation
Luu Chuong A.
Petrokaitis Joseph
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