Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-13
2005-09-13
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S413000, C257S751000, C438S592000, C438S625000, C438S642000
Reexamination Certificate
active
06943416
ABSTRACT:
A method used to form a semiconductor device comprises forming a polysilicon layer, forming a conductive barrier layer on the polysilicon layer, then forming a conductive nitride layer on the conductive barrier layer. Next, a conductive amorphous layer is formed on the conductive barrier layer, and an elemental metal layer is formed on the conductive amorphous layer. Without the conductive amorphous layer the elemental metal layer would form on the conductive nitride layer as a small grained, high resistance layer, while it forms on the conductive amorphous layer as a large grained, low resistance layer. A semiconductor device which may be formed using this method is also described.
REFERENCES:
patent: 6075274 (2000-06-01), Wu et al.
patent: 6221762 (2001-04-01), Byun et al.
patent: 6297152 (2001-10-01), Itoh et al.
patent: 6365507 (2002-04-01), Hu
patent: 6451644 (2002-09-01), Yu
patent: 6486060 (2002-11-01), Hermes et al.
patent: 6589884 (2003-07-01), Torek
patent: 2004/0207030 (2004-10-01), McTeer
Copending Application: “Conductive Transistor Structure for a Semiconductor Device and Method for Forming Same”, U.S. Appl. No. 10/418,412, filed Apr. 16, 2003.
Martin Kevin D.
Micro)n Technology, Inc.
Prenty Mark V.
LandOfFree
Method and structure for reducing resistance of a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and structure for reducing resistance of a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for reducing resistance of a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3432481