Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-01-04
2011-01-04
Estrada, Michelle (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S068000, C257S071000, C257S296000, C257S306000, C257S906000, C257SE21008, C257SE27048, C257SE27092, C257SE29346, C438S239000, C438S386000, C438S393000, C438S396000
Reexamination Certificate
active
07863665
ABSTRACT:
A method and structure for reducing cracks in a dielectric in contact with a metal structure. The metal structure comprises a first metal layer; a second metal layer disposed on, and in contact with the first metal layer, the second metal layer being stiffer than the first metal layer; a third metal layer disposed on, and in contact with the second metal layer, the second metal layer being stiffer than the third metal layer. An additional metal is included wherein the dielectric layer is disposed between the metal structure and the additional metal.
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Liles Barry J.
Whelan Colin S.
Daly, Crowley & Mofford & Durkee, LLP
Estrada Michelle
Raytheon Company
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