Method and structure for providing tuned leakage current in...

Details Method and structure for providing tuned leakage current in... Method and structure for providing tuned leakage current in...

2006-05-16

2006-05-16

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257S351000, C438S149000, C438S153000, C438S154000

Reexamination Certificate

active

07045862

ABSTRACT:
A field effect transistor (FET) comprising an isolation layer, a source region positioned over the isolation layer, a drain region positioned over the isolation layer, a bifurcated silicide gate region positioned over the channel region, and a gate oxide layer adjacent to the gate region, wherein the gate oxide layer comprises an alkali metal ion implanted at a dosage calculated based on threshold voltage test data provided by a post silicide electrical test conducted on said FET, wherein the alkali metal ion comprises any of cesium and rubidium.

REFERENCES:
patent: 3328210 (1967-06-01), McCaldin et al.
patent: 4827324 (1989-05-01), Blanchard
patent: 5264380 (1993-11-01), Pfiester
patent: 5321283 (1994-06-01), Cogan et al.
patent: 6509233 (2003-01-01), Chang et al.
patent: 2002/0123196 (2002-09-01), Chang et al.
patent: 2004/0195628 (2004-10-01), Wu et al.
patent: 2005/0020020 (2005-01-01), Collaert et al.

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