Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2008-03-25
2008-03-25
Clark, S. V. (Department: 2823)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S107000
Reexamination Certificate
active
07348217
ABSTRACT:
Method and structure for optimizing and controlling diffusional creep at metal contact interfaces are disclosed. Embodiments of the invention accommodate height variations in adjacent contacts, decrease planarization uniformity requirements, and facilitate contact bonding at lower temperatures and pressures by employing shapes and materials that respond predictably to compressive interfacing loads.
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Harmes Michael C.
Kim Sarah E.
Kobrinsky Mauro J.
List R. Scott
Clark S. V.
Guglielmi David L.
Intel Corporation
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