Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-22
2000-08-01
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257510, 257506, 257411, H01L 2976, H01L 2900
Patent
active
060970693
ABSTRACT:
A structure for increasing the threshold voltage of a corner device, particularly for shallow trench isolation having narrow devices. An FET comprises a substrate having a channel formed therein under a gate between spaced source and drain regions. A trench isolation region is formed in the substrate around the transistor and on opposite sides of the channel to isolate the transistor from other devices formed in the substrate, with the trench isolation region forming first and second junction corner devices with opposite sides of the channel. A first dielectric layer is formed under the gate and over the channel of the field effect transistor to form a gate insulator for the transistor. A second corner edge dielectric layer is formed under the gate structure and over the first and second corner devices, such that the corner edge dielectric layer increases the thickness of dielectric over each corner device and thus increases the threshold voltage (Vt) and edge dielectric breakdown and decreases MOSFET corner gate-induced drain leakage.
REFERENCES:
patent: 4481527 (1984-11-01), Chen et al.
patent: 4698900 (1987-10-01), Esquivel
patent: 4923821 (1990-05-01), Namose
patent: 5399520 (1995-03-01), Jang
patent: 5457339 (1995-10-01), Komori et al.
patent: 5468677 (1995-11-01), Jun
patent: 5521422 (1996-05-01), Mandelman et al.
patent: 5539229 (1996-07-01), Noble, Jr. et al.
patent: 5606202 (1997-02-01), Bronner et al.
patent: 5646052 (1997-07-01), Lee
patent: 5646063 (1997-07-01), Mehta et al.
patent: 5650654 (1997-07-01), Noble
patent: 5674775 (1997-10-01), Ho et al.
Brown Jeffrey S.
Gauthier Robert J.
Voldman Steven H.
International Business Machines - Corporation
Shkurko, Esq. Eugene I.
Thomas Tom
Tran Thien F
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