Method and structure for improving patterning design for process

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364490, 364489, 364488, G06F 1560

Patent

active

053792335

ABSTRACT:
A method of interactive feedback in semiconductor processing is provided which compensates for lithographic proximity effects, reactive ion etch loading effects, electromigration and stress due to layering.

REFERENCES:
patent: 4520269 (1985-05-01), Jones
patent: 4717644 (1988-01-01), Jones et al.
patent: 4761560 (1988-08-01), Glendinning
patent: 4812962 (1989-03-01), Witt
patent: 5242770 (1993-09-01), Chen et al.

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