Method and structure for improving patterning design for process

Details Method and structure for improving patterning design for process Method and structure for improving patterning design for process

1995-12-05

1997-08-05

Trans, Vincent N.

Boots, shoes, and leggings

364488, G06F 1750

Patent

active

056548974

ABSTRACT:
A method of interactive feedback in semiconductor processing is provided which compensates for lithographic proximity effects, reactive ion etch loading effects, electromigration and stress due to layering.

REFERENCES:
patent: 4520269 (1985-05-01), Jones
patent: 4717644 (1988-01-01), Jones et al.
patent: 4761560 (1988-08-01), Glendinning
patent: 4812962 (1989-03-01), Witt
patent: 5242770 (1993-09-01), Chen et al.
"Electron-Beam Proximity--A New High-Speed Lithography Method for Submicron Structures" by H. Bohlen et al, IBM J. Res. Develop., vol. 26, No. 5, Sep. 1982, pp. 568-579.

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