Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-05-09
2006-05-09
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S528000, C438S514000
Reexamination Certificate
active
07041581
ABSTRACT:
The preferred embodiment of the present invention overcomes the limitations of the prior art and provides a device and method to increase the latch-up immunity of CMOS devices by forming a non-dopant region near the edge of a dopant region. The preferred embodiment method to increase the latch-up immunity of CMOS devices uses hybrid photoresist to selectively form non-dopant implants near the edges of the N-well and/or P-well. The non-dopant implants suppress diffusion of dopant in the wells resulting in greater control of well spacing, and hence reducing the gain of the parasitic transistor. This reduces the propensity of the CMOS device to latch-up. The preferred embodiment method allows the non-dopant implants to be formed without requiring additional masking steps over the prior art methods.
REFERENCES:
patent: 4728619 (1988-03-01), Pfiester et al.
patent: 5212101 (1993-05-01), Canham et al.
patent: 5296387 (1994-03-01), Aronowitz et al.
patent: 5654210 (1997-08-01), Aronowitz et al.
patent: 5770504 (1998-06-01), Brown et al.
patent: 5861330 (1999-01-01), Baker et al.
patent: 6013546 (2000-01-01), Gardner et al.
patent: 6054344 (2000-04-01), Liang et al.
patent: 6110800 (2000-08-01), Chou
patent: 6232639 (2001-05-01), Baker et al.
patent: 6486510 (2002-11-01), Brown et al.
patent: 6797576 (2004-09-01), Teng et al.
patent: 2004/0219769 (2004-11-01), Voldman et al.
Lanzerotu Louis D.
Voldman Steven H.
Lindsay Jr. Walter L.
Sabo William D.
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