Method and structure for high aspect gate and short channel leng

Details Method and structure for high aspect gate and short channel leng Method and structure for high aspect gate and short channel leng

1997-12-18

1999-10-19

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257346, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059693940

ABSTRACT:
A method and structure are provided for an IGFET which has a short conduction channel length. The short channel IGFET functions more rapidly than do longer conduction channel devices. Also the invention includes a dielectric layer with a high dielectric constant value (K) to prolong the longevity of the device. A lightly doped drain region similarly preserves the integrity of the IGFET by protecting the gate from "hot electron injection." The method and structure provide an IGFET with increased performance without compromising the IGFET's reliability or longevity.

REFERENCES:
patent: 5115290 (1992-05-01), Murakami et al.
patent: 5514891 (1996-05-01), Abrokwah et al.
patent: 5578518 (1996-11-01), Koike et al.

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