Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-11-07
2006-11-07
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C257S427000
Reexamination Certificate
active
07133309
ABSTRACT:
A method for generating an offset field for a magnetic random access memory (MRAM) device includes forming a first pinned layer integrally with a wordline, and forming a second pinned layer integrally with a bitline. An MRAM cell is disposed between the wordline and the bitline, the MRAM cell including a reference layer, an antiparallel free layer and a tunnel barrier therebetween. The first pinned layer is formed with an internal magnetization in a manner so as to create a first external field generally perpendicular to a long axis of the wordline, and the second pinned layer is formed with an internal magnetization in a manner so as to create a second external field generally perpendicular to a long axis of the bitline.
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Gaidis Michael C.
Trouilloud Philip L.
Bernstein Allison
Cantor & Colburn LLP
International Business Machines - Corporation
Phung Anh
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