Method and structure for forming trench DRAM with asymmetric...

Details Method and structure for forming trench DRAM with asymmetric... Method and structure for forming trench DRAM with asymmetric...

2011-08-30

2011-08-30

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257SE21651

Reexamination Certificate

active

08008160

ABSTRACT:
A method of forming a trench device structure having a single-side buried strap is provided. The method includes forming a deep trench in a semiconductor substrate, said deep trench having a first side portion and a second side portion; depositing a node dielectric on said deep trench, wherein said node dielectric covers said first side portion and said second side portion; depositing a first conductive layer over said node dielectric; performing an ion implantation or ion bombardment at an angle into a portion of said node dielectric, thereby removing said portion of said node dielectric from said first side portion of said deep trench; and depositing a second conductive layer over said first conductive layer, wherein said second conductive layer outdiffuses into a portion of said semiconductor substrate. A trench device structure having a single-side buried strap is also provided. The device structure includes a semiconductor substrate having a deep trench therein; and a first conductive layer and a second conductive layer sequentially disposed on said deep trench, wherein said second conductive layer outdiffuses into a portion of said semiconductor substrate.

REFERENCES:
patent: 5264716 (1993-11-01), Kenney
patent: 5482883 (1996-01-01), Rajeevakumar
patent: 5930585 (1999-07-01), Coronel et al.
patent: 6008104 (1999-12-01), Schrems
patent: 6271142 (2001-08-01), Gruening et al.
patent: 6355529 (2002-03-01), Heo et al.
patent: 6426526 (2002-07-01), Divakaruni et al.
patent: 6498061 (2002-12-01), Divakaruni et al.
patent: 6566177 (2003-05-01), Radens et al.
patent: 6566190 (2003-05-01), Lee et al.
patent: 6573137 (2003-06-01), Divakaruni et al.
patent: 6833305 (2004-12-01), Mandelman et al.
patent: 6919255 (2005-07-01), Birner et al.
patent: 7019350 (2006-03-01), Hsu
patent: 7074689 (2006-07-01), Gutsche et al.
patent: 2005/0164446 (2005-07-01), Lin et al.
patent: 2005/0186730 (2005-08-01), Hsu
patent: 2005/0277247 (2005-12-01), Wu et al.
patent: 2006/0084223 (2006-04-01), Seidl
patent: 2006/0134877 (2006-06-01), Goebel et al.
patent: 2007/0102744 (2007-05-01), Okajima
patent: 10219123 (2003-11-01), None
patent: 03/067596 (2003-08-01), None
International Search Report dated May 15, 2009.

Affiliated with

Also associated with

Rating

Method and structure for forming trench DRAM with asymmetric... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and structure for forming trench DRAM with asymmetric..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for forming trench DRAM with asymmetric... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2731246