Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2006-03-31
2009-10-06
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S406000, C438S419000, C257SE21090, C257SE23005
Reexamination Certificate
active
07598153
ABSTRACT:
A method for fabricating bonded substrate structures, e.g., silicon on silicon. In a specific embodiment, the method includes providing a thickness of single crystal silicon material transferred from a first silicon substrate coupled to a second silicon substrate. In a specific embodiment, the second silicon substrate has a second surface region that is joined to a first surface region from the thickness of single crystal silicon material to form of an interface region having a first characteristic including a silicon oxide material between the thickness of single crystal silicon material and the second silicon substrate. The method includes subjecting the interface region to a thermal process to cause a change to the interface region from the first characteristic to a second characteristic. In a specific embodiment, the second characteristic is free from the silicon oxide material and is an epitaxially formed silicon material provided between the thickness of single crystal silicon material and the second silicon substrate. The method includes maintaining the interface region free of multiple voids during the thermal process to form the epitaxially formed silicon material to electrically couple the thickness of single crystal silicon material to the second silicon substrate.
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Gui e
Henley Francois J.
Jacy David
Kang Sien Giok
Kirk Harry Robert
Malik Igor
Dang Phuc T
Silicon Genesis Corporation
Townsend and Townsend / and Crew LLP
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