Method and structure for fabricating a halftone mask for the...

Details Method and structure for fabricating a halftone mask for the... Method and structure for fabricating a halftone mask for the...

2007-06-12

2007-06-12

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S091000, C438S029000, C438S238000

Reexamination Certificate

active

10773519

ABSTRACT:
A method for manufacturing a mask for integrated circuit devices. The method includes providing a quartz substrate having a surface and forming a MoSi film overlying the surface of the quartz substrate. The method also includes patterning the MoSi film overlying the quartz substrate to form a mask pattern. A step of forming an opaque edge structure comprising a carbon bearing material on a portion of the surface around a peripheral region of the mask pattern is also included.

REFERENCES:
patent: 5474864 (1995-12-01), Isao et al.
patent: 5674647 (1997-10-01), Isao et al.
patent: 2004/0086788 (2004-05-01), Shiota et al.

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