Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-06-12
2007-06-12
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S091000, C438S029000, C438S238000
Reexamination Certificate
active
10773519
ABSTRACT:
A method for manufacturing a mask for integrated circuit devices. The method includes providing a quartz substrate having a surface and forming a MoSi film overlying the surface of the quartz substrate. The method also includes patterning the MoSi film overlying the quartz substrate to form a mask pattern. A step of forming an opaque edge structure comprising a carbon bearing material on a portion of the surface around a peripheral region of the mask pattern is also included.
REFERENCES:
patent: 5474864 (1995-12-01), Isao et al.
patent: 5674647 (1997-10-01), Isao et al.
patent: 2004/0086788 (2004-05-01), Shiota et al.
Luu Chuong Anh
Semiconductor Manufacturing International d (Shanghai) Corporati
Townsend and Townsend / and Crew LLP
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