Method and structure for enhancing trench capacitance

Details Method and structure for enhancing trench capacitance Method and structure for enhancing trench capacitance

2006-10-03

2006-10-03

Toledo, Fernando L. (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000, C257S532000, C257S534000, C257SE21652

Reexamination Certificate

active

07115934

ABSTRACT:
A trench capacitor formed with a bottle etch step has a polygonal cross section produced by forming thermally oxidizing the trench walls with thinner oxide at the corners of the trench, then performing the bottle etch step with the nitride in place, thereby extending the trench walls laterally only outside the corners, so that the distance of closest approach between adjacent trenches is reduced while the length of the perimeter is maintained.

REFERENCES:
patent: 4673962 (1987-06-01), Chatterjee et al.
patent: 5888864 (1999-03-01), Koh et al.
patent: 6200873 (2001-03-01), Schrems et al.
patent: 6232171 (2001-05-01), Mei
patent: 6432774 (2002-08-01), Heo et al.
patent: 6583462 (2003-06-01), Furukawa et al.
patent: 2001/0016398 (2001-08-01), Kudelka et al.
patent: 2003/0224605 (2003-12-01), Tews et al.

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