Method and structure for creating embedded metal features

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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C257S750000, C257S752000, C257S758000, C257SE23062, C257SE23063, C029S832000, C029S842000, C029S846000, C174S255000, C174S256000, C174S261000, C174S262000

Reexamination Certificate

active

07911037

ABSTRACT:
A method and structure for creating embedded metal features includes embedded trace substrates wherein bias and signal traces are embedded in a first surface of the embedded trace substrate and extend into the body of the embedded trace substrate. The bias trace and signal trace trenches are formed into the substrate body using LASER ablation, or other ablation, techniques. Using ablation techniques to form the bias and signal trace trenches allows for extremely accurate control of the depth, width, shape, and horizontal displacement of the bias and signal trace trenches. As a result, the distance between the bias traces and the signal traces eventually formed in the trenches, and therefore the electrical properties, such as impedance and noise shielding, provided by the bias traces, can be very accurately controlled.

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