Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-27
2005-12-27
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S624000, C438S625000, C438S384000, C438S508000, C257SE27047, C257SE23150
Reexamination Certificate
active
06979637
ABSTRACT:
A method and structure for controlling the surface properties in the dielectric layers in a thin film component can be provided for improving the trimming process of thin film element. A metal fill is configured with a uniform fill pattern beneath an array of thin film resistors, and can comprise a plurality of smaller features or peaks providing a finer fill pattern that improves the control of the topology of the dielectric layers. The fill pattern can be configured in various manners, such as fill patterns parallel to the thin film resistor, fill patterns perpendicular to the thin film resistor, or fill patterns comprising a checkerboard-like configuration. The method and device for controlling the dielectric layers can also provide for a reduction in the interferences that can be caused by reflecting back of the focused energy by comprising a dispersion arrangement configured to provide dispersive grading of the laser energy below the thin film resistor and thus reduce the interaction of reflected energy with the incident laser beam. The method also improves the contrast of the laser alignment targets with respect to their background.
REFERENCES:
patent: 6320242 (2001-11-01), Takasu et al.
Beach Eric W.
Hoyt Eric L.
Meinel Walter B.
Brady W. James
Fourson George
Pham Thanh V.
Swayze, Jr. W. Daniel
Telecky , Jr. Frederick J.
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