Method and structure for controlling floating body effects

Details Method and structure for controlling floating body effects Method and structure for controlling floating body effects

2007-05-01

2007-05-01

Owens, Douglas W. (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S479000, C257S327000, C257S374000, C257S368000

Reexamination Certificate

active

10756585

ABSTRACT:
A method for forming an integrated circuit with a semiconductor substrate is provided. A gate dielectric is formed on the semiconductor substrate, and a gate is formed on the gate dielectric. Source/drain junctions are formed in the semiconductor substrate adjacent the gate. A facet is formed in at least one of the source/drain junctions of the integrated circuit.

REFERENCES:
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patent: 6001726 (1999-12-01), Nagabushnam et al.
patent: 6479866 (2002-11-01), Xiang
patent: 6797556 (2004-09-01), Murthy et al.
Campbell, Stephen A. 1996, Oxford University Press, The Science and Engineering of Microelectronic Fabrication, p. 354.

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