Method and structure for ballast resistor

Details Method and structure for ballast resistor Method and structure for ballast resistor

2011-04-05

2011-04-05

Ghyka, Alexander G (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S580000, C257SE21370

Reexamination Certificate

active

07919830

ABSTRACT:
A method for fabricating a low-value resistor such as a ballast resistor for bipolar junction transistors. The resistor may be fabricated using layers of appropriate sheet resistance so as to achieve low resistance values in a compact layout. The method may rely on layers already provided by a conventional CMOS process flow, such as contact plugs and fully silicided (FUSI) metal gates.

REFERENCES:
patent: 6531745 (2003-03-01), Woolery et al.
patent: 2005/0133839 (2005-06-01), Okushima
patent: 2006/0063341 (2006-03-01), Beasom
patent: 2006/0267047 (2006-11-01), Murayama
patent: 2007/0034960 (2007-02-01), Zhang et al.

Affiliated with

Also associated with

Rating

Method and structure for ballast resistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and structure for ballast resistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and structure for ballast resistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2713382