Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000
Reexamination Certificate
active
06900506
ABSTRACT:
A method for fabricating a junction field transistor for high-voltage applications. A lightly doped first epitaxial layer is formed on a highly doped substrate. A second epitaxial layer is deposited with a heavier dopant concentration than the first epitaxial layer. The second layer contains a control structure having a plurality of implanted gate regions and a source. A guard ring is formed to isolate the source and the control structure. The combination of the lightly doped first epitaxial layer and the guard ring enable the JFET to be operated with a breakdown voltage in excess of 100 volts. Multiple guard rings may be used to provide a breakdown voltage in excess of 150 volts.
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Johnson Eric
Yu Ho-Yuan
Ha Nathan W.
LovolTech, Inc.
Pham Hoai
Wagner , Murabito & Hao LLP
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