Method and solution for etching indium antimonide

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Other Related Categories

156626, 156651, 156654, 252 791, H01L 21306, C03C 1500, C03C 2506

Type

Patent

Status

active

Patent number

043964591

Description

ABSTRACT:
A method for delineating defects in the <111> surface of an indium antimonide crystal wafer by treating said surface with a 5 percent solution of iodine in N,N-dimethylacetamide to form triangularly shaped etch pits in the defect area.

REFERENCES:
patent: 3143447 (1964-08-01), Norr
Compound Semiconductors, vol. 1, Preparation of III-V Compounds, Rheinhold 1963, QCI, J82, pp. 445-468, Etching of the III-V Intermetallic Compounds, by J. W. Faust, Jr.

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