Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2008-12-10
2010-12-07
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257SE29024
Reexamination Certificate
active
07847288
ABSTRACT:
A method for fabricating test structures on a wafer for integrated circuits. The method includes providing a semiconductor substrate, e.g., silicon wafer. The method includes forming a plurality of integrated circuit chip structures on the semiconductor substrate and forming a plurality of MOS devices on a scribe line formed between a first group and a second group of integrated circuit chip structures concurrently using one or more similar processes during forming the plurality of integrated circuit chip structures. The method includes forming a first contact structure and a second contact structure. The first contact structure is coupled to a first MOS device in the plurality of MOS devices and the second contact structure is coupled to an Nth MOS device in the plurality of MOS devices, where N is an integer greater than 1.
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Chaudhari Chandra
Semiconductor Manufacturing International (Shanghai) Corporation
Townsend and Townsend / and Crew LLP
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