Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1994-12-06
1995-10-24
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257637, 257639, 257641, 257649, H01L 2358
Patent
active
054612543
ABSTRACT:
There is described a multiple layer metallurgy, spin-on-glass multilayer metallurgy structure and method for making such structure for a one micrometer or less feature size integrated circuit with substantially free field inversion on a semiconductor substrate having a pattern of device regions therein. A passivation layer is located over the surfaces of the patterns. A pattern of openings are made through the passivation layer to at least some of the device regions which include source/drain regions. A patterned first metallurgy layer is in contact with the pattern of openings. A first via dielectric layer is located over the pattern of first metallurgy layer. A silicon-rich barrier dielectric layer is located over the first layer. A cured spin-on-glass layer is over the barrier layer. A silicon oxide second via dielectric layer is over the spin-on-glass layer. A pattern of openings is in the second via layer, spin-on-glass layer, barrier layer and first via layer. A patterned second metallurgy layer is in contact with the pattern of openings to make electrical contact with the first metallurgy layer wherein the multilevel metallurgy integrated circuit with substantially free field inversion is completed.
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patent: 3760242 (1973-09-01), Duffy et al.
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patent: 4986878 (1991-01-01), Malazgirt et al.
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"Field Inversion In CMOS Double Metal Circuits Due To Carbon Based SOGS" by D. Pramanik et al., Jun. 12-13, 1989, VMIC Conference.
Lin Jiunn-Jyi
Lin Kwang-Ming
Tsai Lih-Shyng
Ying Shu-Lan
Jackson Jerome
Kelley Nathan Kip
Saile George O.
Stoffel Wolmar J.
Taiwan Semiconductor Manufacturing Company , Ltd.
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