Method and related circuit for accessing locations of a...

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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C365S149000, C365S189090

Reexamination Certificate

active

06909626

ABSTRACT:
A method and circuit for accessing a memory location comprising at least one respective ferroelectric storage unit of a matrix of ferroelectric storage units, the memory location is selected by connecting a first terminal of a ferroelectric storage element of the at least one respective storage unit to a respective access line to the memory location; at least another memory location to which is not intended to be accessed is also selected. A second terminal of the ferroelectric storage element is biased to a prescribed access electric potential, and an electric potential on the access line is sensed; the second terminal of the ferroelectric storage elements of the other memory location is also biased to the access potential.

REFERENCES:
patent: 5539279 (1996-07-01), Takeuchi et al.
patent: 5671174 (1997-09-01), Koike et al.
patent: 5940316 (1999-08-01), Koike
patent: 6147895 (2000-11-01), Kamp
patent: 6795330 (2004-09-01), Demange et al.
patent: 2003/0234413 (2003-12-01), Sberno et al.

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