Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-11-14
2006-11-14
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S204000, C365S185240
Reexamination Certificate
active
07136320
ABSTRACT:
A method and circuit for refreshing dynamic memory cells arranged along word lines and bit lines are provided, the memory cells being refreshed in a manner dependent on a refresh signal with a refresh frequency by the activation of the word line in order to write the information back to the memory cells arranged on the relevant word line, in which case the refresh frequency is set in a manner dependent on the charge loss of first dummy memory cells during a refresh period of the refresh signal on a first dummy word line and/or in a manner dependent on the charge loss of second dummy memory cells during the refresh period of the refresh signal on a second dummy word line.
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German Examination Report dated Jul, 4, 2003.
Hausmann Michael
Schnabel Joachim
Elms Richard
Infineon - Technologies AG
Nguyen Dang
Patterson & Sheridan L.L.P.
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