Method and process intermediate for electrostatic discharge...

Details Method and process intermediate for electrostatic discharge... Method and process intermediate for electrostatic discharge...

2007-05-15

2007-05-15

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE31062

Reexamination Certificate

active

10859678

ABSTRACT:
Shorting bars are provided for electrostatic discharge protection as a portion of trace deposition in a photodiode array. During normal processing for etching of the metal layers, the shorting bars are removed without additional processing requirements. Additional shorting elements are provided by employing FET silicon layers having traces in contact with the array traces to provide extended ESD protection until removal of those shorting elements during normal processing for opening vias for photodiode bottom contact.

REFERENCES:
patent: 4803536 (1989-02-01), Tuan
patent: 5184235 (1993-02-01), Sukegawa
patent: 5220443 (1993-06-01), Noguchi
patent: 5313319 (1994-05-01), Salisbury
patent: 5353142 (1994-10-01), Dodd
patent: 5471329 (1995-11-01), Nakajima
patent: 6013923 (2000-01-01), Huang
patent: 2006/0092591 (2006-05-01), Yuan et al.

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