Method and mesh reference structures for implementing Z-axis...

Details Method and mesh reference structures for implementing Z-axis... Method and mesh reference structures for implementing Z-axis...

2005-10-13

2011-11-08

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S128000, C438S584000, C438S598000, C438S652000, C257SE23141, C257SE23151, C257SE23170, C257SE21575, C257SE21627

Reexamination Certificate

active

08053352

ABSTRACT:
A method and mesh reference applications are provided for implementing Z-axis cross-talk reduction. A mesh reference plane including a grid of mesh traces is formed with the mesh traces having selected thickness and width dimensions effective for reference current-flow distribution. An electrically conductive coating is deposited to fill the mesh electrical holes in the mesh reference plane to reduce cross-talk, substantially without affecting mechanical flexibility.

REFERENCES:
patent: 5296651 (1994-03-01), Gurrie et al.
patent: 5334800 (1994-08-01), Kenney
patent: 6432813 (2002-08-01), Sandhu et al.
patent: 6599828 (2003-07-01), Gardner
patent: 2002/0163029 (2002-11-01), Dirnecker et al.
patent: 2006/0131700 (2006-06-01), David et al.
General definition of sputtering process by www.wikipedia.com; search word sputtering process.

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