Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-07-16
2009-12-01
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C369S126000, C427S100000, C977S947000
Reexamination Certificate
active
07626846
ABSTRACT:
A media for an information storage device includes a substrate of single-crystal silicon, a buffer layer of an epitaxial single crystal insulator formed over the substrate, a bottom electrode layer of an epitaxial single crystal conductor formed over the buffer layer, a ferroelectric layer of an epitaxial single crystal ferroelectric material formed over the bottom electrode layer, and an overlayer of an epitaxial single crystal material formed over the ferroelectric layer. Dipole charges generally having a first orientation exist at an interface between the bottom electrode layer and the ferroelectric layer includes, while dipole charges generally having a second orientation opposite the first orientation exist at an interface between the ferroelectric layer and the overlayer includes.
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Kim Byong Man
Ma Qing
Rao Valluri Ramana
Wang Li-Peng
Fliesler & Meyer LLP
Nanochip, Inc.
Nguyen Tuan T
Sofocleous Alexander
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