Method and material for removing etch residue from high...

Details Method and material for removing etch residue from high... Method and material for removing etch residue from high...

2006-10-24

2006-10-24

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S597000, C257SE23007

Reexamination Certificate

active

07125809

ABSTRACT:
Contact openings in semiconductor substrates are formed through insulative layers using an etchant material. The etchant typically leaves behind a layer of etch residue which interferes with the subsequent deposition of conductive material in the opening, as well as the conductive performance of the resulting contact. A method of etch removal from semiconductor contact openings utilizes ammonia to clean the surfaces thereof of any etch residue.

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