Method and layout for MOS capacitors with phase shifted layers

Details Method and layout for MOS capacitors with phase shifted layers Method and layout for MOS capacitors with phase shifted layers

2005-04-05

2005-04-05

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257S534000

Reexamination Certificate

active

06876024

ABSTRACT:
A layout and a method for generating a mask for a capacitor are provided. The layout and the mask allow for the formation of the capacitor or an array of capacitors without phase conflict when using phase shift masks in an optical lithography fabrication process.

REFERENCES:
patent: 6396086 (2002-05-01), Takeuchi et al.

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