Method and fabricating semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S514000, C438S710000, C438S724000

Reexamination Certificate

active

10924720

ABSTRACT:
A method for fabricating a semiconductor device is capable of preventing a hard mask layer of a conductive structure from being damaged during a self-aligned contact etching process. The method includes the steps of: forming a plurality of conductive structures including a conductive layer and a hard mask layer on a substrate; sequentially forming a first nitride layer, an oxide layer, a second nitride layer, and an etch stop layer on the plurality of conductive structures; forming an inter-layer insulation layer on the etch stop layer; and performing a self-aligned contact (SAC) etching process selectively etching the inter-layer insulation layer, the etch stop layer, the second nitride layer and the oxide layer until the SAC etching process is stopped at the first nitride layer to thereby form a contact hole exposing the first nitride layer.

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patent: 6562651 (2003-05-01), Chung et al.
patent: 2002/0065023 (2002-05-01), Kwok
patent: 2003/0080395 (2003-05-01), Beasom
patent: 2004/0126951 (2004-07-01), Lee
patent: 2005/0136683 (2005-06-01), Lee et al.
patent: 2000-0015113 (2000-03-01), None
patent: 10-2005-0063851 (2005-06-01), None

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