Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1992-07-31
1995-03-28
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
427574, 427569, 117103, H01L 21306
Patent
active
054013569
ABSTRACT:
The amount of dust particles deposited on a semiconductor wafer during plasma etching or CVD in manufacturing a semiconductor integrated circuit is decreased by second plasma generating electrode 28 disposed around a lower electrode 15 in a plasma etching chamber 4a. High frequency voltage is applied to the second plasma generating electrode 18 just before the stop of plasma discharge to form a sub-plasma of high density along the outer periphery of the lower electrode 15, there is formed a sub-potential distribution acting to push out negatively charged dust particles stagnating near the main surface of a semiconductor substrate 7 toward the outer periphery of the wafer. The negatively charged dust particles thus pushed out from the vicinity of the main surface of the wafer 7 are moved to the second plasma generating electrode 28 and exhausted by a vacuum pump through an exhaust port 25.
REFERENCES:
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4421592 (1983-12-01), Shuskus et al.
patent: 4962727 (1990-10-01), Harada
patent: 5017835 (1991-05-01), Oeschsner
patent: 5221425 (1993-06-01), Blanchard et al.
patent: 5259881 (1993-11-01), Edwards et al.
patent: 5273586 (1993-12-01), Kim et al.
SPIE Proceedings, Oct., 1989, vol. 1185, "Dry Processing for submicrometer Lithography", Bondur et al, pp. 86-97.
Enami Hiromichi
Katsuyama Masanori
Konno Akihiko
Yagi Kiyomi
Breneman R. Bruce
Fleck Linda J.
Hitachi , Ltd.
LandOfFree
Method and equipment for plasma processing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and equipment for plasma processing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and equipment for plasma processing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2247804