Method and edge region structure using co-implanted...

Details Method and edge region structure using co-implanted... Method and edge region structure using co-implanted...

2008-12-01

2010-10-12

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21568

Reexamination Certificate

active

07811901

ABSTRACT:
A method for fabricating a silicon on substrate structure having smooth edge regions. The method includes providing a silicon donor substrate having a surface region and a backside region. A substrate thickness is provided between the surface region and the backside region. The method includes co-implanting a plurality of first particles through the surface region into a vicinity of a cleave region and a plurality of second particles through the surface region into the vicinity of the cleave region. The cleave region defines a thickness of material to be removed between the cleave region and the surface region. The surface region of the silicon donor substrate is joint to a handle substrate to form a coupled substrate structure. The coupled substrate structure is then processed using a thermal treatment process and placed into a cleaving chamber. A cleaving action is initiated at an edge region of the coupled substrate structure to begin to detach the thickness of material at the edge region toward a center region of the thickness of material. The thickness of material is freed from a remaining portion of the coupled substrate structure. In a specific embodiment, the method provides an edge region having an edge profile that is substantially free from particles that can lead to breakage and the like.

REFERENCES:
patent: 6482725 (2002-11-01), Ishida
patent: 6846718 (2005-01-01), Aga et al.
patent: 6900113 (2005-05-01), Nakano et al.

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