Method and devices for detecting the end point of plasma process

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

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438 9, H01L 21302

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active

059807679

ABSTRACT:
Disclosed herein is a method of detecting an end point of plasma process performed on an object, and a plasma process apparatus. The method includes the steps of detecting an emission spectrum over a wavelength region specific to C.sub.2 in the plasma, by optical detecting means, and determining the end point of the plasma process from the emission intensity of the emission spectrum detected by the optical detector. The apparatus has a process chamber, a pair of electrodes, a light-collecting device, an optical detector, and a determining device. The chamber has a monitor window. The electrodes are located in the process chamber. The first electrode is used to support the object. A high-frequency power is supplied between the electrodes to change a process gas into plasma. The light-collecting device collects the light from the plasma through the monitor window. The optical detector detects an emission spectrum from the light collected. The determining device determines the end point of the plasma process from the emission intensity of the emission spectrum detected. The monitor window is secured to the distal end of a cylindrical member protruding from the chamber. The member has a narrow gas passage for trapping a gas generated by the plasma process.

REFERENCES:
patent: 4812416 (1989-03-01), Hewig et al.
patent: 4857136 (1989-08-01), Zajac
patent: 5322590 (1994-06-01), Koshimizu

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