Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Patent
1998-01-07
2000-04-04
Chu, John S.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
522151, 522153, 522154, 522113, G03C 172, G03C 174
Patent
active
060459670
ABSTRACT:
A novel photoresist copolymer, consisting of at least two aliphatic cyclo-olefins and an amine, which is useful for the photolithography using ArF as a light source. The photoresist prepared from the copolymer can be patterned with high resolution.
REFERENCES:
patent: 3370047 (1968-02-01), Raines
patent: 4011386 (1977-03-01), Matsumoto et al.
patent: 4106943 (1978-08-01), Ikeda et al.
patent: 4491628 (1985-01-01), Ito et al.
patent: 4883740 (1989-11-01), Schwalm et al.
patent: 5087677 (1992-02-01), Brekner et al.
patent: 5212043 (1993-05-01), Yamamoto et al.
patent: 5252427 (1993-10-01), Bauer et al.
patent: 5278214 (1994-01-01), Moriya et al.
patent: 5585219 (1996-12-01), Kaimoto et al.
patent: 5866665 (1999-02-01), Shaffer et al.
T.I. Wallow et al., "Evaluation of Cyclo-Olefin-Maleic Anhydride Alternating Copolymers as Single-Layer Photo-Resists for 193 NM Photo-Lithography" SPIE vol. 2724/354-365.
Thomas I Wallow, et al., "Evaluation of Cycloolefin-Maleic Anhydride Alternating Copolymers as Single-Layer Photoresist for 193nm Photolithography", 1996, Proc. SPIE, vol. 2724, 355-364.
R.D. Allen et. al., "The Influence of Photoacid Structure on the Design and Performance of 193nm Resists", 1997, Journal of Photopolymer Science and Technology, vol. 10, 503-510.
F.M. Houlihan et. al., "A Commercially Viable 193nm Single Layer Resist Platform", 1997, Journal of Photopolymer Science and Technology, vol. 10, 511-520.
J.C. Jung et. al., "ArF Single Layer Resist Composed of Alicyclic Main Chain Containing Maleic Anhydride", 1997, Journal of Photopolymer Science and Technology, vol. 10, 529-533.
S.J. Choi et. al., "New ArF Single-layer Resist for 193-nm Lithography", 1997, Journal of Photopolymer Science and Technology, vol. 10, 521-528.
K. Nozaki and Ei Yaro, "New Protective Groups in Methacrylate Polymer for 193-nm Resists", 1997, Journal of Photopolymer Science and Technology, vol. 10, 545-550.
K. Nakano et. al., "Chemically Amplified Resist Based on High Etch-Resistant Polymer for 193-nm Lithography", 1997, Journal of Photopolymer Science and Technology, vol. 10, 561-569.
CA Abstract 127;227308 & Proc. SPIE-Int. Soc. Opt. Eng. (1997) 3049 Advances in Resist Technology and Processing XIV 92-103.
CA Abstract 127;227269 & J. Photopolym. Sci. Technol. (1997) 10(4) 529-534.
CA Abstract 66;18889 & Magy. Kem. Foly. (1966) 72(11)491-3.
CA Register No. 100207-98-5.
CA Register No. 32759-57-2.
CA Register No. 27056-70-8.
CA Register No. 174659-58-6.
CA Register No. 28503-41-5.
CA Register No. 194997-59-6.
CA Abstract No. 104:149512 & Macromolecules 19(4) 1266-8 (1986).
CA Abstract No. 91:124064 & Makromol. Chem. 180(8) 1975-88 (1979).
CA Abstract No. 113:24734 & JP 02 051511.
CA Abstract No. 124:317926 & Marcomol. Rapid Commun. 17(3) 173-180 (1996).
CA Abstract No. 124:203171 & Macromolecules 29(8) 2755-63 (1996).
CA Registry No. 199328-07-9.
Jung Jae Chang
Park Joo On
Roh Chi Hyeong
Chu John S.
Hyundai Electronics Industries Co,. Ltd.
Lee Sin J.
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